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germanium power transistors 5 amp germanium pnp 2n350 2n350a 2n351 110 40 40 40 40 40 40 40 40 40 70 70 70 70 70 70 70
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NPN silicon germanium microwave transistor for high speed low noise applications in a plastic 4 pin dual emitter SOT343F package Features n Low noise high gain microwave transistor n Noise figure NF = dB at GHz n High maximum stable gain 27 dB at GHz n 110 GHz fT silicon germanium technology Applications
Transistor Biasing Electronics Silicon Versus Germanium The basic purpose of transistor biasing is to keep the base emitter
Germanium Transistor Selector Guide In Order of Case Style T C = 63°C T C = 25°C Click on part number for PDF
Flasher Circuits Two Transistor Flasher Ideas the circuit will work with most germanium transistors and will work down to 1 VDC The NPN should be a silicon type
Mike Zee MZE Electroarts Entertainment Buy New Old Stock Vintage Germanium Transistors NOS Vintage and Used Music Instruments Electronic Equipment Electronic Components and Parts Records on line
· Respected engineers I am facing a problem again and seeking for an answer How a germanium transistor can be replaced with a silicon one I have provided a vintage Swedish Army power generator with a burned AVR I LOVE the way it s build and wish to repair it BUT it is too complicated expensive to provide 2N174A the vintage germanium transistor
Rev A/AH Page 2 of 2 Germanium Glass Diode 1N34A Dimensions in How to contact us US HEADQUARTERS 28040 WEST HARRISON PARKAWAY VALENCIA CA 91355 4162
AU110 Germanium Power Devices All products available from stock Fast easy ordering
temperature of the two types of power transistor is Germanium 100°C to 110°C Silicon 150°C to 200°C Heat sinks increase the power rating ie power handling capacity of a transistor by getting rid of the heat developed quickly It is in the form of a sheet of metal Since the power dissipation within a transistor is mainly due to power dissipated at
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Abstract Si based tunneling field effect transistors TFETs with elevated Ge source were fabricated on Si 110 substrate The in situ B doped Ge Ge B source grown on Si 110 has a substitutional B concentration up to ×10 20 cm 3 that is more than one order of magnitude higher than that in Ge grown on Si 100 under the same growth
· I also believe there were around 3 different germanium circuits in the original germanium fuzz face the new market transistor NKT275 is the most sought after and commands the most money the new market transistor NKT275 is the most sought after and commands the most money
Germanium wafers in stock in small quantities and large
TOSHIBA Transistor Silicon Germanium NPN Epitaxial Planar Type MT3S113 110 100 VCE=5V Ta=25°C Collector emitter voltage V CE V Collector current IC mA
· Analogman Sunface TI/UK Germanium Transistor Fuzz Pedal demo The transistors are 1968 Texas Shure SM7B through a Focusrite ISA 110
ASZ16 Datasheet Equivalent Cross Reference Search Type Designator ASZ16 Material of Transistor Ge Polarity PNP Maximum Collector Power Dissipation Pc 30 W
· I figured I d include a PNP version as some people may have a lot more PNP Germanium Transistors then NPN ones This layout is also verified but and this is a huge but you will need to audition transistors as no one really said what they used that sounded good Do
NTE160 from NTE Electronics Inc at Allied $ 50 $ 100 $4 The NTE160 is a germanium mesa PNP transistor in
solder quickly before the germanium transistor gets cooked People with lower power irons can solder sockets to avoid problems Soldering the completed PCB to the pots and switch is the last thing you do fuzz factory 470 2 resistor 680 1 resistor 47K 1 resistor 10K 4 resistor 22K 3 resistor 220K 2 resistor 1M 1 resistor SPDT 1 switch ON
SIEMENS Germanium siemens I GQ040 AKTIENGESELLSCHAFT4071 F 02 AF239 Abstract transistor h5c ï ¿ESC D â A23Sb05 DQOMObb R WMSIZ6 PNP Germanium RF Transistor 25C 04066 0 AF239 SIEMENS AKTIENGESELLSCHAF ¿7 for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor
Things are picking up with more Transistor amps but very few are Silicon the risky Germanium type still being around eg the Mullard AD140 output transistors as Armstrong used in their 1968 range after buying a ton of obsolete stock The writer of the 1964 article says Valve Amps are already obsolete To that we say in some ways Transistors
If you are making voltage measurements on a germanium PNP transistor what should be the minimum voltage you measure between the transistor s leads 1 answer · Engineering · 3 years ago
Growth and transport properties of complementary germanium nanowire field effect transistors Andrew B Greytak Lincoln J Lauhon Mark S Gudiksen and Charles M Liebera Department of Chemistry and Chemical Biology Division of Engineering and Applied Sciences
Abstract This dissertation presents several fully integrated power amplifiers PAs within Ka band 40 GHz and W band 75 110 GHz with >100 mW output powers in commercially available um silicon germanium HBT transistor technology ft = 200 GHz BVCEO = V
Sleeves of 50 each CV7355 PNP germanium military version of the 2N1309 $125 for a sleeve of 50 I can t pick hfe/for you but these are nice transistors
For technical reasons PNP germanium transistors are easy to make whereas NPN germanium were much more difficult and expensive to make so Schober used the 046127 PNP germanium transistor almost everywhere The number 046127 is a house number we don t know who actually made these or where they came from but they
· cool affordable low gain germanium drive anybody know of a cool low gain germanium drive pedal There s a huge difference in germanium transistor
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